BF1109,215 NXP Semiconductors, BF1109,215 Datasheet - Page 15

RF MOSFET Small Signal Dual N-Channel 11V 30mA 200mW

BF1109,215

Manufacturer Part Number
BF1109,215
Description
RF MOSFET Small Signal Dual N-Channel 11V 30mA 200mW
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1109,215

Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
11 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Package / Case
SOT-143B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Printed in The Netherlands
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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
R77/02/pp 15
Date of release: 1997 Dec 08

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