BF1109,215 NXP Semiconductors, BF1109,215 Datasheet - Page 3

• Manufacturer Part Number: BF1109,215
• Description: RF MOSFET Small Signal Dual N-Channel 11V 30mA 200mW
• Manufacturer: NXP Semiconductors

Specifications of BF1109,215

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 11 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Package / Case: SOT-143B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
1997 Dec 08
handbook, halfpage
V
I
I
I
P
T
T
SYMBOL
D
G1
G2
stg
j
DS
tot
N-channel dual-gate MOS-FETs
(mW)
P tot
250
200
150
100
50
0
0
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
Fig.4 Power derating curve.
40
PARAMETER
80
120
T amb (°C)
MGM243
160
T
amb
 80 C; note 1
3
CONDITIONS
BF1109; BF1109R; BF1109WR





65

MIN.
11
30
10
10
200
+150
+150
Product specification
MAX.
V
mA
mA
mA
mW
C
C
UNIT