BF1109,215 NXP Semiconductors, BF1109,215 Datasheet - Page 9

• Manufacturer Part Number: BF1109,215
• Description: RF MOSFET Small Signal Dual N-Channel 11V 30mA 200mW
• Manufacturer: NXP Semiconductors

Specifications of BF1109,215

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 11 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Package / Case: SOT-143B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
1997 Dec 08
handbook, full pagewidth
(MHz)
1000
N-channel dual-gate MOS-FETs
100
200
300
400
500
600
700
800
900
f
50
(MHz)
MAGNITUDE
800
f
(ratio)
0.995
0.992
0.984
0.973
0.961
0.944
0.926
0.906
0.887
0.868
0.852
S
11
DS
= 9 V; V
ANGLE
14.3
21.2
27.9
34.4
40.8
46.9
52.9
58.8
64.3
(deg)
3.71
7.29
G2-S
DS
R gen
50 Ω
(dB)
F
V i
= 9 V; V
MAGNITUDE
1.5
min
= 4 V; I
Fig.18 Cross-modulation test set-up.
(ratio)
3.013
3.002
2.967
2.922
2.869
2.793
2.730
2.660
2.605
2.527
2.457
50 Ω
G2-S
D
4.7 nF
S
= 12 mA
10 nF
21
= 4 V; I
V G2
ANGLE
G2
G1
1115.3
10 kΩ
175.0
(deg)
170.2
160.7
151.3
142.0
132.9
124.1
106.5
89.6
97.8
D
BF1109WR
9
BF1109R
= 12 mA
(ratio)
BF1109
0.684
MAGNITUDE
D
S
(ratio)
BF1109; BF1109R; BF1109WR
0.000
0.001
0.002
0.002
0.003
0.003
0.003
0.003
0.004
0.004
0.004
V DS

opt
47 μH
4.7 nF
10 nF
S
12
(deg)
40.94
ANGLE
107.2
129.7
(deg)
114.9
MDA626
88.2
83.7
86.2
83.2
84.1
85.7
88.4
94.6
50 Ω
R1 =
MAGNITUDE
0.9377
(ratio)
0.998
0.997
0.995
0.992
0.990
0.987
0.985
0.983
0.981
0.977
Product specification
40.4
S
()
R
22
n
ANGLE
10.5
13.9
17.2
20.5
23.7
26.8
30.0
33.1
(deg)
1.8
3.5
7.0