PRF949 T/R NXP Semiconductors, PRF949 T/R Datasheet - Page 2

• Manufacturer Part Number: PRF949 T/R
• Description: RF Bipolar Small Signal NPN 10V 9GHZ
• Manufacturer: NXP Semiconductors

Specifications of PRF949 T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-416
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PRF949,115

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT416
(SC-75) package. The transistor is primarily intended for
wideband applications in the GHz range in the RF front
end of analog and digital cellular telephones, cordless
phones, radar detectors, pagers and satellite TV-tuners.
QUICK REFERENCE DATA
Note
1. T
2000 Apr 03
C
f
G
NF
P
R
SYMBOL
T
Small size
Low noise
Low distortion
High gain
Gold metallization ensures excellent reliability.
Communication and instrumentation systems.
tot
re
th j-s
UHF wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
total power dissipation
thermal resistance from junction
to soldering point
PARAMETER
I
I
I
T
f = 1 GHz
T
C
C
C
amb
S
s
= 0; V
= 15 mA; V
= 15 mA; V
= 75 C; note 1
=
= 25 C; f = 1 GHz
opt
CB
; I
2
C
CONDITIONS
= 6 V; f = 1 MHz
= 5 mA; V
PINNING SOT416 (SC-75)
handbook, halfpage
CE
CE
Marking code: V0.
= 6 V; f
= 6 V;
PIN
1
2
3
CE
m
Fig.1 Simplified outline (SOT416).
base
emitter
collector
= 6 V;
= 1 GHz
Top view
1
7
MIN.
DESCRIPTION
3
MBK090
0.3
9
16
1.5
2
TYP.
Product specification
2.5
150
500
MAX.
PRF949
pF
GHz
dB
dB
mW
K/W
UNIT