PRF949 T/R NXP Semiconductors, PRF949 T/R Datasheet - Page 5

• Manufacturer Part Number: PRF949 T/R
• Description: RF Bipolar Small Signal NPN 10V 9GHZ
• Manufacturer: NXP Semiconductors

Specifications of PRF949 T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-416
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PRF949,115

Philips Semiconductors
2000 Apr 03
handbook, halfpage
handbook, halfpage
UHF wideband transistor
Fig.2
I
Fig.4
C
(mW)
(pF)
P tot
C re
= I
200
150
100
0.5
0.4
0.3
0.2
0.1
50
c
0
0
= 0; f = 1 MHz.
0
0
Power derating as a function of soldering
point temperature.
Feedback capacitance as a function of
collector-base voltage; typical values.
50
4
100
8
150
V CB (V)
T s ( C)
MCD973
MGS498
200
12
5
handbook, halfpage
handbook, halfpage
V
Fig.3
V
Fig.5
CE
CE
(GHz)
h FE
160
120
f T
= 6 V.
= 6 V; f
70
40
10
0
8
6
4
2
0
0
0
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
m
= 1 GHz; T
10
10
amb
20
20
= 25 C.
30
30
Product specification
40
40
I C (mA)
I C (mA)
PRF949
MCD974
MCD975
50
50