PRF949 T/R NXP Semiconductors, PRF949 T/R Datasheet - Page 8

• Manufacturer Part Number: PRF949 T/R
• Description: RF Bipolar Small Signal NPN 10V 9GHZ
• Manufacturer: NXP Semiconductors

Specifications of PRF949 T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-416
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PRF949,115

Philips Semiconductors
2000 Apr 03
handbook, full pagewidth
handbook, full pagewidth
UHF wideband transistor
f = 1 GHz; V
I
(1) G = 17 dB.
(2) G = 16 dB.
(3) G = 15 dB.
(4) NF = 1.6 dB.
(5) NF = 1.8 dB.
(6) NF = 2 dB.
f = 2 GHz; V
Z
(1) G
(2) G = 10 dB.
(3) G = 9 dB.
(4) G = 8 dB.
(5) NF = 2.1 dB.
(6) NF = 2.3 dB.
(7) NF = 2.5 dB.
C
o
= 5 mA; Z
= 50 .
max
= 10.9 dB.
CE
o
CE
= 50 .
= 6 V;
= 6 V; I
Fig.12 Common emitter available gain, noise and stability circles; typical values.
Fig.13 Common emitter available gain, noise and stability circles; typical values.
C
unstable region
= 5 mA;
source
180
180
0
0
135
135
135
0.2
135
0.2
0.2
0.2
unstable region
0.2
source
(1)
(1)
0.5
0.5
0.5
0.5
(2)
(2)
(3)
(3)
0.5
0.5
(4)
(7)
(6)
(5)
opt
90
90
90
90
8
1
1
1
1
1
1
(6)
(5)
2
2
opt
(4)
2
2
2
2
region load
5
unstable
5
region load
45
unstable
45
45
45
5
5
5
5
MGS506
MGS507
0
0
0.2
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0
1.0
Product specification
PRF949