BLS6G2933S-130 NXP Semiconductors, BLS6G2933S-130 Datasheet
BLS6G2933S-130
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BLS6G2933S-130 Summary of contents
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... BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...
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... Applications S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency range 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLS6G2933S-130 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 BLS6G2933S-130 LDMOS S-band radar power transistor Conditions Min 0 ...
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... NXP Semiconductors Table 8. f GHz 2.9 3.0 3.1 3.2 3.3 Fig 1. 7.1 Ruggedness in class-AB operation The BLS6G2933S-130 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 100 mA BLS6G2933S-130_3 Product data sheet Typical impedance Z S Ω 2.2 − j7.6 2.5 − ...
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... P ( 300 μs; δ Fig 3. 001aaj268 (1) (%) (2) (3) 120 180 P ( 300 μs; δ Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 BLS6G2933S-130 LDMOS S-band radar power transistor (2) (3) ( 120 = 100 μs; δ 100 mA ( 2.9 GHz ( 3.1 GHz ( 3.3 GHz Power gain as a function of load power ...
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... (%) 50 η 3150 3250 3350 f (MHz) = 300 μs; = 100 mA Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 BLS6G2933S-130 LDMOS S-band radar power transistor 180 P L (W) (2) 120 (3) ( 100 μs; δ 100 mA ( 2.9 GHz ( 3.1 GHz ( 3.3 GHz Load power as a function of input power ...
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... Product data sheet Value μF 47 μ μ Ω All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 BLS6G2933S-130 LDMOS S-band radar power transistor C8 C2 001aaj275 = 6.15 and thickness = 0.64 mm. r Quantity Remarks 1 ATC 100A or equivalent 1 ATC 900A or equivalent 1 2 ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 BLS6G2933S-130 LDMOS S-band radar power transistor 1.70 17.75 9.53 0.25 1.45 17 ...
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... Data sheet status Product data sheet Preliminary data sheet Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 BLS6G2933S-130 LDMOS S-band radar power transistor Change notice Supersedes - BLS6G2933S-130_2 - BLS6G2933S-130_1 - - © NXP B.V. 2010. All rights reserved ...
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... NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 BLS6G2933S-130 LDMOS S-band radar power transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 BLS6G2933S-130 LDMOS S-band radar power transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLS6G2933S-130_3 All rights reserved. Date of release: 3 March 2010 ...