BLS6G2933S-130 NXP Semiconductors, BLS6G2933S-130 Datasheet - Page 6

• Manufacturer Part Number: BLS6G2933S-130
• Description: RF MOSFET Small Signal 130W, 2.9-3.3GHz Radar Appl.
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2933S-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063208112

NXP Semiconductors
BLS6G2933S-130_3
Product data sheet
Fig 6.
Fig 8.
(dB)
(W)
G
P
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
180
120
L
p
60
14
12
10
0
8
6
4
2850
0
V
Load power as a function of input power;
typical values
P
δ = 10 %.
Power gain and drain efficiency as function of
frequency; typical values
DS
L
= 130 W; V
= 32 V; I
2950
Dq
DS
6
= 100 mA; t
3050
= 32 V; I
3150
Dq
(2)
(3)
(1)
p
= 100 mA; t
= 300 μs; δ = 10 %.
12
3250
P
All information provided in this document is subject to legal disclaimers.
i
(W)
G
001aaj270
001aaj272
η
f (MHz)
p
D
p
= 300 μs;
3350
18
Rev. 03 — 3 March 2010
60
50
40
30
20
10
(%)
η
D
Fig 7.
Fig 9.
(dB)
(W)
G
P
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
180
120
L
p
60
14
12
10
0
8
6
4
2850
0
V
Load power as a function of input power;
typical values
P
δ = 20 %.
Power gain and drain efficiency as function of
frequency; typical values
DS
L
= 130 W; V
= 32 V; I
LDMOS S-band radar power transistor
2950
BLS6G2933S-130
Dq
DS
6
= 100 mA; t
3050
= 32 V; I
3150
Dq
(2)
(3)
(1)
p
= 100 mA; t
= 100 μs; δ = 20 %.
12
3250
© NXP B.V. 2010. All rights reserved.
P
i
(W)
G
001aaj271
001aaj273
η
f (MHz)
p
D
p
= 100 μs;
3350
18
60
50
40
30
20
10
(%)
η
D
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