BLS6G2933S-130 NXP Semiconductors, BLS6G2933S-130 Datasheet - Page 3

• Manufacturer Part Number: BLS6G2933S-130
• Description: RF MOSFET Small Signal 130W, 2.9-3.3GHz Radar Appl.
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2933S-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063208112

NXP Semiconductors
6. Characteristics
7. Application information
BLS6G2933S-130_3
Product data sheet
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
T
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
V
G
RL
P
η
P
t
t
DSS
DSX
GSS
r
f
j
case
fs
D
(BR)DSS
GS(th)
L
CC
L(1dB)
droop(pulse)
DS(on)
p
= 25
in
= 25
°
C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
°
C; unless otherwise specified, in a class-AB production circuit.
Characteristics
Application information
Parameter
output power
supply voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 March 2010
p
= 300
μ
s;
Conditions
V
V
V
V
V
V
V
V
I
δ
D
GS
DS
GS
GS
DS
GS
DS
GS
= 10 %; RF performance at V
= 6.3 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
LDMOS S-band radar power transistor
D
DS
D
D
= 0.6 mA
+ 3.75 V;
+ 3.75 V;
DS
= 180 mA
= 9 A
BLS6G2933S-130
= 28 V
Conditions
P
P
P
P
P
P
P
= 0 V
L
L
L
L
L
L
L
= 130 W
= 130 W
= 130 W
= 130 W
= 130 W
= 130 W
= 130 W
Min
60
1.4
-
27
-
8.1
-
-
-
Min Typ
-
10
7.5
40
-
-
-
DS
= 32 V; I
Typ
-
1.8
-
33
-
13
0.085
© NXP B.V. 2010. All rights reserved.
130
-
12.5 -
140
47
0
20
6
10
Dq
Max
-
2.4
4.2
-
450
-
0.135 Ω
Max Unit
-
32
-
-
-
0.5
50
50
= 100 mA;
3 of 12
W
V
dB
dB
W
%
dB
ns
ns
Unit
V
V
μA
A
nA
S