BLF6G20-110 NXP Semiconductors, BLF6G20-110 Datasheet - Page 7

• Manufacturer Part Number: BLF6G20-110
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-110

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-110,112

NXP Semiconductors
Fig 6.
BLF6G20-110_BLF6G20LS-110_3
Product data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
Package outline SOT502B
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 03 — 13 January 2009
BLF6G20-110; BLF6G20LS-110
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
0.210
0.170
F
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
20.70
20.45
0.815
0.805
U 1
0.390
0.380
9.91
9.65
U 2
E 1
PROJECTION
0.010
EUROPEAN
0.25
w 2
c
Q
Power LDMOS transistor
E
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
03-01-10
07-05-09
SOT502B
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