BLF248 NXP Semiconductors, BLF248 Datasheet - Page 10

• Manufacturer Part Number: BLF248
• Description: RF MOSFET Power RF DMOS 300W VHF P-P
• Manufacturer: NXP Semiconductors

Specifications of BLF248

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-262-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF248,112

Philips Semiconductors
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. L1, L3 to L11, L16 to L22 and L24 are micro-striplines on a double copper-clad printed-circuit board, with glass
3. L2 and L23 are soldered on striplines L1 and L24 respectively.
4. A copper strap, thickness 0.8 mm, is soldered on striplines L16 to L21.
2003 Sep 02
R3, R4
R7, R8
R9
IC1
VHF push-pull power MOS transistor
COMPONENT
microfibre PTFE dielectric (
0.4 W metal film resistor
1 W metal film resistor
1 W metal film resistor
78L05 voltage regulator
DESCRIPTION
r
= 2.2), thickness
1
16
inch, thickness of copper sheet 2
10
536
10
3.16 k
VALUE
5%
DIMENSIONS
35 m.
Product specification
CATALOGUE NO.
BLF248