BLF248 NXP Semiconductors, BLF248 Datasheet - Page 5

• Manufacturer Part Number: BLF248
• Description: RF MOSFET Power RF DMOS 300W VHF P-P
• Manufacturer: NXP Semiconductors

Specifications of BLF248

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-262-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF248,112

Philips Semiconductors
2003 Sep 02
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
(mV/K)
V
Fig.4
I
Fig.6
D
T.C.
R DSon
DS
(m )
= 8 A; V
= 10 V.
200
100
0
1
2
3
4
5
10
0
1
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
0
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
GS
= 10 V.
50
1
100
I D (A)
T j ( C)
MGP204
MGP206
10
150
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(pF)
1500
1000
(A)
C
500
I D
= 10 V; T
= 0; f = 1 MHz.
60
40
20
0
0
0
0
Drain current as a function of gate-source
voltage; typical values per section.
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
j
= 25 C.
10
5
10
20
C os
C is
Product specification
15
30
V GS (V)
V DS (V)
BLF248
MGP205
MGP207
20
40