BLF248 NXP Semiconductors, BLF248 Datasheet - Page 12

• Manufacturer Part Number: BLF248
• Description: RF MOSFET Power RF DMOS 300W VHF P-P
• Manufacturer: NXP Semiconductors

Specifications of BLF248

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-262-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF248,112

Philips Semiconductors
2003 Sep 02
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-AB operation; V
R
P
Fig.13 Input impedance as a function of frequency
Class-AB operation; V
R
P
Fig.15 Power gain as a function of frequency;
L
L
GS
GS
(dB)
= 300 W (total device); T
G p
= 300 W (total device); T
( )
Z i
= 536
= 536
10
15
20
40
30
20
10
5
0
5
0
0
0
(series components); typical values per
section.
typical values per section.
(per section);
(per section);
50
50
DS
DS
= 28 V; I
= 28 V; I
100
100
h
h
= 25 C.
= 25 C.
x i
r i
D
D
= 2
= 2
150
150
250 mA;
250 mA;
200
200
f (MHz)
f (MHz)
MGP218
MGP216
250
250
12
handbook, halfpage
Class-AB operation; V
R
P
Fig.14 Load impedance as a function of frequency
L
GS
= 300 W (total device); T
( )
Z L
= 536
3
2
1
0
1
0
(series components); typical values per
section.
(per section);
50
DS
= 28 V; I
100
h
= 25 C.
R L
X L
D
= 2
150
250 mA;
Product specification
200
f (MHz)
BLF248
MGP217
250