BLF6G20LS-140 NXP Semiconductors, BLF6G20LS-140 Datasheet
BLF6G20LS-140
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BLF6G20LS-140 Summary of contents
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... BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 0.01 % probability on CCDF per carrier; ...
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... RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G20LS-140 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... Symbol Parameter P L(AV IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF6G20LS-140 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1000 mA BLF6G20LS-140_1 Product data sheet Characteristics Conditions drain-source breakdown V voltage gate-source threshold voltage ...
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... Table 8 Component layout Figure 1) Value 0 0.9 pF 1 220 3.3 k 9.1 Rev. 01 — 27 February 2009 BLF6G20LS-140 Power LDMOS transistor C20 V C13 C14 C15 R3 C9 C10 C8 Q1 C16 C11 C12 001aah589 for list of components. Remarks [1] [2] [2] [2] [2] [2] TDK C5750X7R1H106M or equivalent ...
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... REFERENCES JEDEC JEITA Rev. 01 — 27 February 2009 BLF6G20LS-140 Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
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... Radio Frequency Surface Mounted Device Voltage Standing Wave Ratio Wideband Code Division Multiple Access Release date Data sheet status 20090227 Product data sheet Rev. 01 — 27 February 2009 BLF6G20LS-140 Power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 27 February 2009 BLF6G20LS-140 Power LDMOS transistor © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G20LS-140_1 All rights reserved. Date of release: 27 February 2009 ...