NE25118-T1-U73 NEC, NE25118-T1-U73 Datasheet

NE25118-T1-U73

Manufacturer Part Number

NE25118-T1-U73

Description

RF GaAs Dual Gate MESFET

Manufacturer

NEC

Datasheet

1.NE25118.pdf (4 pages)

Specifications of NE25118-T1-U73

Mounting Style

SMD/SMT

Forward Transconductance Gfs (max / Min)

25 mS

Gate-source Breakdown Voltage

- 4.5 V

Continuous Drain Current

20 mA

Power Dissipation

120 mW

Package / Case

SOT-343

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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FEATURES

• SUITABLE FOR USE AS RF AMPLIFIER IN

• LOW C

• HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz

• LOW NF: 1.1 dB TYP AT 900 MHz

• L

• ION IMPLANTATION

• AVAILABLE IN TAPE & REEL OR BULK

• LOW PACKAGE HEIGHT: 1.0 mm MAX

DESCRIPTION

The NE25118 is a dual gate GaAs FET designed to provide

flexibility in its application as a mixer, AGC amplifier, or low

noise amplifier. As an example, by shorting the second gate

to the source, higher gain can be realized than with single gate

MESFETs. This device is available in a 4 pin super mini-mold

package, (SOT-343 type). Maximum package height of 1.0

mm makes the NE25118 an ideal device for PCMCIA card

applications.

ELECTRICAL CHARACTERISTICS

UHF TUNER

SYMBOL

G1S (OFF)

G2S (OFF)

G1SS

G2SS

DSS

= 1.0 m, L

RSS

ISS

DSX

RSS

: 0.02 pF (TYP)

Noise Figure at V

f = 900 MHz

Power Gain at V

f = 900 MHz

Drain to Source Breakdown Voltage at V

Saturated Drain Current at V

Gate 1 to Source Cutoff Voltage at V

Gate 2 to Source Cutoff Voltage at V

Gate 1 Reverse Current at V

Gate 2 Reverse Current at V

Forward Transfer Admittance at V

Input Capacitance at V

f = 1 MHz

Reverse Transfer Capacitance at V

= 1.5 m, W

G2S

G1S

= 10 mA, f = 1.0 kHz

= 10 mA, f = 1 MHz

= 0 V, I

= 0, I

= 0 V, I

PARAMETERS AND CONDITIONS

= 10 A

= 100 A

PACKAGE OUTLINE

= 400 m

= 5 V, V

PART NUMBER

= 5 V, V

DUAL-GATE GaAS MESFET

= 5 V, V

G2S

= 1 V, I

= 5 V, V

= 0, V

= 1 V, I

G2S

= 25 C)

= 5 V, V

G1S

G2S

= 1 V, I

GENERAL PURPOSE

= 5 V, V

G2S

= 5 V,

= 10 mA,

G1S

= -4V, V

= 10 mA,

= 0 V, V

G2S

= -4 V,

G2S

= 10 mA,

= 1 V,

G2S

G1S

= 1 V,

G1S

= 0

= 0 V

California Eastern Laboratories

POWER GAIN AND NOISE FIGURE

DRAIN TO SOURCE VOLTAGE

Drain to Source Voltage, V

UNITS

MIN

vs.

-3.5

0.5

f = 900 MHz

G2S

= 10 mA

NE25118

= 0.5 V

= 2 V

= 1 V

NE25118

TYP

0.02

1.1

1.0

(V)

MAX

0.03

2.5

1.5

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NE25118-T1-U73 Summary of contents

Page 1

... AVAILABLE IN TAPE & REEL OR BULK • LOW PACKAGE HEIGHT: 1.0 mm MAX DESCRIPTION The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate 1 to Source Voltage G1S V Gate 2 to Source Voltage G2S I Drain Current D P Total Power Dissipation T T Channel Temperature CH T Storage ...

Page 3

... TYPICAL PERFORMANCE CURVES INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE 2 G2S D 1 G2S D -1.0 0 Gate 2 to Source Voltage, V Note: 1. Initial bias conditions. V G1S specified drain current. NE25118 G2S D FREQUENCY S 11 (MHz) MAG ANG 100 0.999 -3.3 200 1.000 -7.2 300 0.998 -9.3 400 0 ...

Page 4

... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE ORDERING INFORMATION PART NUMBER NE25118 +0.10 0.3 -0.05 NE25118-T1 (LEADS 0.65 1.3 0.65 +0.10 0.15 -0.05 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS AVAILABILITY ...

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