NE25118-T1-U73 NEC, NE25118-T1-U73 Datasheet - Page 2

• Manufacturer Part Number: NE25118-T1-U73
• Description: RF GaAs Dual Gate MESFET
• Manufacturer: NEC

Specifications of NE25118-T1-U73

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 25 mS
• Gate-source Breakdown Voltage: - 4.5 V
• Continuous Drain Current: 20 mA
• Power Dissipation: 120 mW
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
TYPICAL PERFORMANCE CURVES
Note:
1. Operation in excess of anyone of these parameters may result
in
SYMBOLS
V
T
V
permanent damage.
V
T
STG
G2S
P
G1S
I
CH
DS
D
T
30
10
20
0
150
250
200
120
100
50
0
FORWARD TRANSFER ADMITTANCE vs.
0
-2.0
Gate 2 to Source Voltage
Drain to Source Voltage
Gate 1 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
TOTAL POWER DISSIPATION VS.
Gate 1 to Source Voltage, V
V
f = 1kHz
GATE 1 TO SOURCE VOLTAGE
PARAMETERS
DS
Ambient Temperature, T
AMBIENT TEMPERATURE
= 5V
25
-1.0
-0.5 V
50
FREE AIR
75
0
UNITS
mW
A
V
0.5 V
0 V
mA
V
V
C
C
G2S
G1S
100
( C)
V
= 1.0
(V)
1
-55 to +125
125
RATINGS
+1.0
(T
A
I
-4.5
120
125
DSS
13
(T
= 25 C)
-4.5
A
= 25 C)
25
20
15
10
20
30
10
5
10
0
30
20
0
0
FORWARD TRANSFER ADMITTANCE vs.
0
0
POWER GAIN AND NOISE FIGURE vs.
-2.0
Gate 1 to Source Voltage, V
GATE 1 TO SOURCE VOLTAGE
V
V
f = 900 MHz
DS
G2S
G
NF
= 5 V
= 1 V
V
PS
DRAIN CURRENT vs.
Drain Current, I
Drain Current, I
G2S
DRAIN CURRENT
DRAIN CURRENT
10
-1.0
= 0.5 V
V
G2S
= 1.0 V
5
D
D
20
(mA)
(mA)
0
0.5 V
V
0 V
V
-0.5 V
V
f = 1 kHz
G2S
DS
G1S
DS
= 5V
= 1.0V
= 5 V
(V)
+1.0
30
10
10
0
5