NE25118-T1-U73 NEC, NE25118-T1-U73 Datasheet - Page 3

• Manufacturer Part Number: NE25118-T1-U73
• Description: RF GaAs Dual Gate MESFET
• Manufacturer: NEC

Specifications of NE25118-T1-U73

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 25 mS
• Gate-source Breakdown Voltage: - 4.5 V
• Continuous Drain Current: 20 mA
• Power Dissipation: 120 mW
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MAG =
TYPICAL PERFORMANCE CURVES
NE25118
V
Note:
1. Gain Calculations:
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
FREQUENCY
DS
1000
1100
1200
(MHz)
100
200
300
400
500
600
700
800
900
= 5 V, V
|S
|S
21
12
1.0
2.0
|
|
-1.0
Note:
1. Initial bias conditions. V
(
K
specified drain current.
G2S
Gate 2 to Source Voltage, V
GATE 2 TO SOURCE VOLTAGE
MAG
K - 1
INPUT CAPACITANCE vs.
0.999
1.000
0.998
0.974
1.005
0.942
0.968
0.920
0.952
0.898
0.915
0.879
= 1 V, I
2
V
G2S
).
V
G2S
S
= 1 V at I
When K
11
D
= 1 V at I
= 10 mA
-13.4
-15.7
-19.1
-22.2
-25.2
-28.9
-29.4
-35.1
-35.2
ANG
0
-3.3
-7.2
-9.3
D
= 10 mA
D
1, MAG is undefined and MSG values are used. MSG =
G1S
= 5 mA
V
f = 1kHz
DS
1
set to obtain
G2S
1
= 5 V
MAG
2.359
2.389
2.313
2.233
2.420
2.300
2.332
2.229
2.447
2.303
2.348
2.367
(V)
S
+1.0
21
177.2
169.3
164.4
160.0
158.4
150.0
145.5
141.5
136.8
131.1
125.8
123.5
ANG
(T
A
= 25 C)
MAG
0.006
0.004
0.000
0.004
0.007
0.003
0.004
0.008
0.004
0.001
0.004
0.000
S
12
-122.3
-145.0
123.0
ANG
79.2
29.7
65.0
45.5
80.1
50.9
71.4
91.1
8.3
-30
-15
-45
30
0
15
|S
|S
-3.0
Note:
1. Initial bias conditions. V
21
12
POWER GAIN AND NOISE FIGURE
|
|
Gate 2 to Source Voltage, V
specified drain current.
MAG
GATE 2 TO SOURCE VOLTAGE
, K = 1 + |
V
V
I
f = 900 MHz
0.969
0.981
0.979
0.967
0.999
0.958
0.997
0.957
0.999
0.968
0.984
0.989
D
DS
G2S
= 10 mA
-2.0
= 5 V
= 1 V
S
22
1
-12.5
-11.1
-14.8
-13.0
2 |S
ANG
-1.0
-2.9
-5.8
-7.7
-8.5
-9.4
-1.3
-3.3
| - |S
5.6
2
12
vs.
S
11
21
| - |S
NF
|
2
0
G1S
22
|
2
+1.0
G2S
set to obtain
,
G
PS
(V)
= S
11
+2.0
S
22
10
5
0
- S
21
S
12