NDS9952A Fairchild Semiconductor, NDS9952A Datasheet - Page 3

• Manufacturer Part Number: NDS9952A
• Description: MOSFET N+P 30V 2.9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDS9952A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A, 2.9A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 320pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 3.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9952ATR

Symbol
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
t
Notes:
Electrical Characteristics
D(on)
r
D(off)
f
S
rr
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
SD
g
gs
gd
P
design while R
Typical R
D
JA
t
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
R
T
a. 78
b. 125
c. 135
Scale 1 : 1 on letter size paper
JA
1a
J
J A
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
T
A
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
t
o
CA
C/W when mounted on a 0.5 in
o
o
C/W when mounted on a 0.02 in
C/W when mounted on a 0.003 in
is determined by the user's board design.
R
J C
T
J
R
T
A
CA
t
I
2
D
t
R
2
DS ON
pad of 2oz cpper.
(Note 2)
(T
2
pad of 2oz cpper.
2
pad of 2oz cpper.
A
= 25°C unless otherwise noted)
T
J
Conditions
N-Channel
V
V
P-Channel
V
V
N-Channel
V
I
P-Channel
V
I
V
V
V
V
D
D
DD
GEN
DD
GEN
DS
DS
GS
GS
GS
GS
1b
= 3.7 A, V
= -2.9 A, V
= 10 V,
= -10 V,
= 10 V, I
= -10 V, I
= 0 V, I
= 0 V, I
= 0 V, I
= 0 V, I
= 10 V, R
= -10 V, R
F
F
S
S
= 1.25 A, dI
= -1.25 A, dI
D
= 1.25 A
= -1.25 A
D
GS
GS
GEN
= 1 A,
GEN
= -1 A,
= 10 V
= -10 V
= 6
= 6
(Note 2)
(Note 2)
F
/dt = 100 A/µs
F
/dt = 100 A/µs
1c
Type
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
Typ
-0.8
9.5
1.5
1.6
3.3
3.4
0.8
10
13
21
21
21
10
9
5
8
JC
Max
-1.2
-1.3
100
1.2
1.3
15
40
20
40
50
90
50
50
27
25
75
is guaranteed by
NDS9952A.SAM
Units
nC
nC
nC
ns
ns
ns
ns
ns
A
V