NDS9952A Fairchild Semiconductor, NDS9952A Datasheet - Page 5

• Manufacturer Part Number: NDS9952A
• Description: MOSFET N+P 30V 2.9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDS9952A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A, 2.9A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 320pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 3.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9952ATR

Typical Electrical Characteristics: N-Channel
Figure 11. N-Channel Transconductance Variation
1.12
1.08
1.04
0.96
0.92
1 0
1 0 0 0
8
6
4
2
0
Figure 7. N-Channel Breakdown Voltage Variation
8 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1
-50
5 0
0
Figure 9. N-Channel Capacitance Characteristics.
0.1
with Drain Current and Temperature.
V
DS
with Temperature.
I
=10V
D
-25
0.2
= 250µA
f = 1 MHz
V
GS
2
T
= 0V
0
J
V
DS
, JUNCTION TEMPERATURE (°C)
0.5
, DRAIN TO SOURCE VOLTAGE (V)
I
D
25
, DRAIN CURRENT (A)
4
1
50
2
75
6
T = -55°C
J
5
100
25°C
125°C
8
1 0
125
C iss
C oss
C rss
150
1 0
3 0
(continued)
0.001
0.01
Figure 10. N-Channel Gate Charge Characteristics.
10
0.5
0.1
8
6
4
2
0
1 0
Figure 8. N-Channel Body Diode Forward Voltage
5
1
0
0.2
I
D
V
= 3.7A
Variation with Current and Temperature
GS
T = 125°C
J
2
0.4
= 0V
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.6
Q
4
g
, GATE CHARGE (nC)
25°C
0.8
6
V
DS
= 10V
-55°C
1
8
1.2
10
20V
15V
NDS9952A.SAM
.
1.4
12