SI4567DY-T1-E3 Vishay, SI4567DY-T1-E3 Datasheet - Page 11

• Manufacturer Part Number: SI4567DY-T1-E3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4567DY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 4.1A, 3.6A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 355pF @ 20V
• Power - Max: 1.85W, 1.95W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 4.1 A @ N Channel or 3.6 A @ P Channel
• Power Dissipation: 1850 mW @ N Channel or 1950 mW @ P Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 48mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.2V
• Power Dissipation Pd: 2.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4567DY-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
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-4
-4
Duty Cycle = 0.5
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Duty Cycle = 0.5
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Single Pulse
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Single Pulse
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Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
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Square W ave Pulse Duration (s)
Square W ave Pulse Duration (s)
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Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
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t
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= P
Vishay Siliconix
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DM
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th J A
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th J A
t
t
Si4567DY
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(t )
= 1 1 0 °C/W
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600
10
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