SI4567DY-T1-E3 Vishay, SI4567DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4567DY-T1-E3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4567DY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 4.1A, 3.6A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 355pF @ 20V
• Power - Max: 1.85W, 1.95W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 4.1 A @ N Channel or 3.6 A @ P Channel
• Power Dissipation: 1850 mW @ N Channel or 1950 mW @ P Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 48mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.2V
• Power Dissipation Pd: 2.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4567DY-T1-E3TR

Si4567DY
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
C
V
I
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
Q
g
R
oss
DS
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
V
V
V
DS
V
DS
V
V
V
DS
DS
DS
DS
DS
DS
= - 20 V, V
= - 20 V, V
= - 40 V, V
V
V
V
= - 20 V, V
= 40 V, V
V
V
V
V
V
V
= 20 V, V
= 20 V, V
V
= 20 V, V
V
V
V
GS
DS
DS
V
V
GS
DS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
= - 4.5 V, I
= V
= - 5 V, V
= - 10 V, I
= - 15 V, I
= 0 V, V
= 0 V, I
= V
= - 40 V, V
II
= 0 V, I
I
= 40 V, V
= 4.5 V, I
= 5 V, V
= 10 V, I
= 15 V, I
I
D
I
D
N-Channel
P-Channel
N-Channel
P-Channel
D
D
f = 1 MHz
GS
Test Conditions
= - 250 µA
GS
= - 250 µA
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
GS
GS
GS
, I
, I
D
= - 4.5 V, I
D
= 0 V, T
= - 10 V, I
D
GS
= 0 V, f = 1 MHz
D
= 0 V, T
= 4.5 V I
= 10 V, I
= 0 V, f = 1 MHz
GS
GS
= - 250 µA
D
D
= - 250 µA
D
D
= 250 µA
D
D
GS
= 250 µA
GS
= ± 16 V
= 4.1 A
= - 3.6 A
= 4.1 A
= - 3.6 A
= 3.8 A
= - 2.9 A
= 10 V
= - 10 V
= 0 V
= 0 V
J
J
= 55 °C
D
D
= 55 °C
D
D
= 5 A
= 5 A
= - 5 A
= - 5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.8
- 40
- 20
0.8
1.6
2.8
40
20
S09-0393-Rev. C, 09-Mar-09
0.048
0.056
Typ.
0.068
0.097
- 4.6
- 40
355
480
Document Number: 73426
3.5
3.7
1.1
1.5
1.4
2.7
3.4
5.7
40
15
50
80
29
56
12
7
8
6
a
0.060
0.085
0.070
0.122
Max.
- 100
- 2.2
- 10
100
2.2
5.2
8.6
- 1
10
12
18
1
6
9
Unit
nA
µA
nC
pF
Ω
Ω
V
A
S