SI4567DY-T1-E3 Vishay, SI4567DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4567DY-T1-E3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4567DY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 4.1A, 3.6A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 355pF @ 20V
• Power - Max: 1.85W, 1.95W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 4.1 A @ N Channel or 3.6 A @ P Channel
• Power Dissipation: 1850 mW @ N Channel or 1950 mW @ P Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 48mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.2V
• Power Dissipation Pd: 2.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4567DY-T1-E3TR

Si4567DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.08
0.07
0.06
0.05
0.04
0.03
10
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
4
0
0.0
0.0
0
I
D
= 5 A
V
V
GS
DS
0.5
2.5
4
= 4.5 V
= 20 V
V
DS
V
Q
Output Characteristics
DS
V
g
GS
I
- Drain-to-Source Voltage (V)
D
= 10 V
1.0
- Total Gate Charge (nC)
= 10 V
- Drain Current (A)
Gate Charge
5.0
8
V
1.5
DS
V
GS
= 30 V
12
7.5
= 10 thru 4 V
2.0
3 V
10.0
16
2.5
12.5
20
3.0
2.1
1.8
1.5
1.2
0.9
0.6
550
500
450
400
350
300
250
200
150
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
I
D
- 25
= 5 A
0.5
V
V
8
GS
DS
0
Transfer Characteristics
T
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
1.0
rss
25
Capacitance
T
16
C
= 125 ˚C
S09-0393-Rev. C, 09-Mar-09
50
1.5
C
25 ˚C
iss
Document Number: 73426
C
oss
V
24
75
GS
2.0
= 4.5 V
100
V
32
GS
2.5
125
- 55 ˚C
= 10 V
150
3.0
40