SI4900DY-T1-E3 Vishay, SI4900DY-T1-E3 Datasheet

MOSFET N-CH DUAL 60V 5.3A 8-SOIC

SI4900DY-T1-E3

Manufacturer Part Number
SI4900DY-T1-E3
Description
MOSFET N-CH DUAL 60V 5.3A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4900DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
58 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
665pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.058 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.3 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
5.3A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
72mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4900DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4900DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4900DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4900DY-T1-E3
Quantity:
39 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
Ordering Information: Si4900DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Width)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
60
(V)
G
G
S
S
C
1
1
2
2
= 25 °C.
0.072 at V
0.058 at V
1
2
3
4
Si4900DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
Top View
SO-8
GS
GS
J
(Ω)
= 4.5 V
= 10 V
= 150 °C)
a, d
Dual N-Channel 60-V (D-S) MOSFET
8
7
6
5
D
D
D
D
1
1
2
2
I
D
5.3
4.7
(A)
a
A
= 25 °C, unless otherwise noted
Q
Steady State
g
13 nC
T
T
T
L = 0 1 mH
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• LCD TV CCFL Inverter
G
Symbol
Symbol
T
1
R
R
J
Available
TrenchFET
V
V
E
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
N-Channel MOSFET
D
stg
D
S
1
1
®
Power MOSFET
Typical
55
33
- 55 to 150
G
4.3
3.4
1.7
1.3
Limit
± 20
2
2
5.3
4.3
2.6
6.1
3.1
60
20
11
b, c
2
b, c
b, c
b, c
b, c
N-Channel MOSFET
Maximum
62.5
40
Vishay Siliconix
D
S
2
2
Si4900DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI4900DY-T1-E3

SI4900DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4900DY-T1-E3 (Lead (Pb)-free) Si4900DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Width) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4900DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73272 S09-0540-Rev. E, 06-Apr-09 1.2 1.4 1.6 1.8 2.0 1000 800 600 400 200 Si4900DY Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si4900DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1 250 µ 100 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73272 S09-0540-Rev. E, 06-Apr-09 100 125 150 0.0001 0.001 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4900DY Vishay Siliconix 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ...

Page 6

... Si4900DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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