SI4900DY-T1-E3 Vishay, SI4900DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4900DY-T1-E3
• Description: MOSFET N-CH DUAL 60V 5.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4900DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5.3A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 72mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4900DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
0.080
0.075
0.070
0.065
0.060
0.055
0.050
0.045
0.040
20
18
16
14
12
10
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
6
4
2
0
0.0
0
0
V
0.2
GS
2
V
I
D
DS
= 10 V thru 4 V
= 4.3 A
0.4
= 30 V
3
4
V
V
DS
GS
Output Characteristics
Q
0.6
- Drain-to-Source Voltage (V)
= 4.5 V
6
g
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
0.8
6
8
1.0
10
3 V
1.2
12
9
V
1.4
14
GS
= 10 V
1.6
12
16
1.8
18
2.0
15
20
1000
800
600
400
200
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
V
I
D
0.5
GS
10
= 4.3 A
= 10 V
V
C
V
DS
0
Transfer Characteristics
GS
oss
T
1.0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
20
25
Capacitance
1.5
50
30
Vishay Siliconix
2.0
T
C
C
iss
25 °C
75
= 125 °C
40
Si4900DY
2.5
100
www.vishay.com
50
3.0
125
- 55 °C
150
3.5
60
3