SI4900DY-T1-E3 Vishay, SI4900DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4900DY-T1-E3
• Description: MOSFET N-CH DUAL 60V 5.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4900DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5.3A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 72mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4900DY-T1-E3TR

Si4900DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
20
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
T
J
50
= 150 °C
0.8
I
D
75
= 250 µA
0.001
0.01
100
T
0.1
10
1.0
J
1
100
0.1
= 25 °C
Limited by
* V
1.2
125
GS
Single Pulse
T
A
> minimum V
= 25 °C
V
1.4
150
R
DS
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
*
GS
at which R
DS(on)
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
10
25
20
15
10
5
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.1
1 ms
10 ms
100 ms
1 s
10 s
DC
100 µs
2
V
100
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
S09-0540-Rev. E, 06-Apr-09
Document Number: 73272
10
6
I
D
= 4.3 A
100
8
1000
10