SIA912DJ-T1-GE3 Vishay, SIA912DJ-T1-GE3 Datasheet

MOSFET N-CH DL 12V PWRPAK SC70-6

SIA912DJ-T1-GE3

Manufacturer Part Number
SIA912DJ-T1-GE3
Description
MOSFET N-CH DL 12V PWRPAK SC70-6
Manufacturer
Vishay
Datasheet

Specifications of SIA912DJ-T1-GE3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 4.2A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
11.5nC @ 8V
Input Capacitance (ciss) @ Vds
400pF @ 6V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6 Dual
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.04 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.5 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
63mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIA912DJ-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA912DJ-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
29 969
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74953
S-80436-Rev. B, 03-Mar-08
Ordering Information: SiA912DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
12
PowerPAK SC-70-6 Dual
2.05 mm
6
(V)
D
1
5
G
2
D
1
4
0.040 at V
0.048 at V
0.063 at V
S
S
1
2
1
R
D
http://www.vishay.com/ppg?73257
G
DS(on)
2
1
2
GS
GS
GS
2.05 mm
D
J
(Ω)
2
3
= 4.5 V
= 2.5 V
= 1.8 V
= 150 °C)
b, f
Dual N-Channel 12-V (D-S) MOSFET
I
D
4.5
4.5
4.5
Part # code
(A)
Steady State
a
d, e
T
T
T
T
T
T
T
T
T
T
t ≤ 5 s
). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
4.5 nC
Marking Code
g
(Typ.)
New Product
C A X
X X X
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
Lot Traceability
and Date code
I
P
, T
DM
I
I
GS
DS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• New Thermally Enhaced PowerPAK
• Load Switch for Portable Applications
SC-70 Package
- Small Footprint Area
Typical
12.5
52
®
Power MOSFET
G
1
N-Channel MOSFET
- 55 to 150
4.5
4.5
1.6
1.9
1.2
Limit
4.5
4.5
4.5
260
± 8
6.5
12
20
a, b, c
a, b, c
5
b, c
b, c
b, c
a
a
a
D
S
1
1
Maximum
65
16
Vishay Siliconix
G
®
2
SiA912DJ
N-Channel MOSFET
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
°C
RoHS
COMPLIANT
W
V
A
1

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SIA912DJ-T1-GE3 Summary of contents

Page 1

... 2. Ordering Information: SiA912DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...

Page 2

... SiA912DJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 74953 S-80436-Rev. B, 03-Mar-08 New Product thru 2 1 1.2 1.6 2.0 600 500 400 300 200 = 2.5 V 100 = 4 9 SiA912DJ Vishay Siliconix ° 125 ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0.3 0.2 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.12 0.10 0. ° ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74953 S-80436-Rev. B, 03-Mar-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA912DJ Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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