SIA912DJ-T1-GE3 Vishay, SIA912DJ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIA912DJ-T1-GE3
• Description: MOSFET N-CH DL 12V PWRPAK SC70-6
• Manufacturer: Vishay

Specifications of SIA912DJ-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11.5nC @ 8V
• Input Capacitance (ciss) @ Vds: 400pF @ 6V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.04 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 63mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA912DJ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74953
S-80436-Rev. B, 03-Mar-08
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
20
16
12
8
4
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
D
= 5.5 A
0.4
4
V
DS
2
Output Characteristics
Q
V
V
GS
g
- Drain-to-Source Voltage (V)
DS
- Total Gate Charge (nC)
I
D
= 1.8 V
Gate Charge
- Drain Current (A)
= 6 V
0.8
8
4
V
V
GS
GS
1.2
V
12
= 2.5 V
= 4.5 V
GS
= 5 thru 2.5 V
V
DS
V
V
V
6
GS
GS
= 9.6 V
GS
1.6
16
= 1.5 V
= 1 V
= 2 V
New Product
2.0
20
8
600
500
400
300
200
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
- 25
GS
C
T
rss
C
= 4.5 V, 2.5 V, 1.8 V, I
= 125 °C
V
V
0.5
DS
Transfer Characteristics
GS
3
0
T
J
T
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
C
= 25 °C
oss
C
25
Capacitance
iss
1.0
50
6
Vishay Siliconix
D
= 4.2 A
75
SiA912DJ
T
C
www.vishay.com
1.5
100
= - 55 °C
9
125
2.0
150
12
3