SIA912DJ-T1-GE3 Vishay, SIA912DJ-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIA912DJ-T1-GE3
• Description: MOSFET N-CH DL 12V PWRPAK SC70-6
• Manufacturer: Vishay

Specifications of SIA912DJ-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11.5nC @ 8V
• Input Capacitance (ciss) @ Vds: 400pF @ 6V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.04 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 63mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA912DJ-T1-GE3TR

SiA912DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74953.
www.vishay.com
6
0.01
0.01
0.1
1
1
10
10
-4
0.02
-4
0.05
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
Duty Cycle = 0.5
0.2
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
10
-3
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
S-80436-Rev. B, 03-Mar-08
DM
Document Number: 74953
100
Z
th JA
th JA
t
t
1
2
(t)
= 85 °C/W
1000
10
-1