IRF7317PBF International Rectifier, IRF7317PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7317PBF
• Description: MOSFET N+P 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7317PBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A, 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 29 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 6.6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 31 ns, 49 ns
• Gate Charge Qg: 18 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 17 ns, 40 ns
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.05
0.04
0.03
0.02
0.01
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
0
I =
D
6.0A
V
GS
T , Junction Temperature ( C)
J
2
, Gate-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160
I
D
= 6.6A
4
6
V
°
GS
=
4.5V
8
A
300
250
200
150
100
0.032
0.028
0.024
0.020
50
0
25
0
Starting T , Junction Temperature ( C)
50
J
V
I , Drain Current (A)
D
GS
10
75
= 2.7V
V
GS
= 4.5V
100
TOP
BOTTOM
20
125
°
1.8A
3.3A
4.1A
I D
150
30
A