IRF7317PBF International Rectifier, IRF7317PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7317PBF
• Description: MOSFET N+P 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7317PBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A, 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 29 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 6.6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 31 ns, 49 ns
• Gate Charge Qg: 18 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 17 ns, 40 ns
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.1
100
10
10
1
1
0.1
1.5
TOP
BOTTOM
-V
2.0
-V
DS
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2.5
T = 25 C
J
3.0
°
1
T = 150 C
3.5
J
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
-1.50V
DS
= -10V
4.0
°
°
4.5
5.0
10
100
0.1
10
100
0.1
1
10
0.1
1
0.2
TOP
BOTTOM
-V
-V
DS
0.4
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
SD
, Drain-to-Source Voltage (V)
T = 150 C
,Source-to-Drain Voltage (V)
J
0.6
°
0.8
1
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
-1.50V
1.0
°
°
V
GS
1.2
= 0 V
1.4
10