IRF7317PBF International Rectifier, IRF7317PBF Datasheet - Page 8

• Manufacturer Part Number: IRF7317PBF
• Description: MOSFET N+P 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7317PBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A, 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 29 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 6.6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 31 ns, 49 ns
• Gate Charge Qg: 18 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 17 ns, 40 ns
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.1
10
0.00001
1400
1200
1000
1
800
600
400
200
0
1
0.50
0.20
0.10
0.05
0.02
0.01
-V
DS
(THERMAL RESPONSE)
V
C
C
C
0.0001
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
SINGLE PULSE
C
C
C
= 0V,
= C
= C
= C
iss
oss
rss
gs
ds
gd
+ C
+ C
10
gd
gd
f = 1MHz
0.001
, C
ds
t , Rectangular Pulse Duration (sec)
SHORTED
1
0.01
100
A
10
8
6
4
2
0
0.1
0
I
D
= -2.9A
5
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
G
10
1
J
V
DM
DS
15
x Z
1
= -16V
thJA
P
2
DM
+ T
10
20
A
t
1
t
2
25
100
30
A