NTJD4105CT1G ON Semiconductor, NTJD4105CT1G Datasheet - Page 2

• Manufacturer Part Number: NTJD4105CT1G
• Description: MOSFET N/P 20V/8V 630MA SOT-363
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTJD4105CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
• Drain To Source Voltage (vdss): 20V, 8V
• Current - Continuous Drain (id) @ 25° C: 630mA, 775mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 46pF @ 20V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.375 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 2 S, 2 S
• Drain-source Breakdown Voltage: 20 V @ N Channel or 8 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 0.63 A @ N Channel or 0.775 A @ P Channel
• Power Dissipation: 550 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4105CT1GOS; NTJD4105CT1GOS; NTJD4105CT1GOSTR

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source
Drain−to−Source Breakdown
cient
Zero Gate Voltage Drain Cur-
rent
Gate−to−Source
Gate Threshold Voltage
Gate Threshold
Drain−to−Source On Resist-
ance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Breakdown Voltage
Voltage Temperature Coeffi-
Leakage Current
Temperature Coefficient
Parameter
V
V
V
Symbol
V
Q
R
Q
t
t
(BR)DSS
(BR)DSS
GS(TH)
C
t
t
C
d(OFF)
d(OFF)
GS(TH)
I
C
G(TOT)
Q
I
DS(on)
Q
d(ON)
d(ON)
V
/ T
g
DSS
GSS
G(TH)
t
T
OSS
RSS
RR
ISS
t
t
t
t
FS
GS
GD
SD
r
f
r
f
J
J
(T
/
J
= 25°C unless otherwise noted)
N/P
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
V
V
V
V
V
V
V
GS
f = 1 MHz, V
V
GS
GS
GS
GS
GS
V
V
V
V
GS
GS
http://onsemi.com
GS
GS
GS
GS
d
= 0 V, V
= −4.5 V, V
= −4.5 V, V
= −4.5 V, V
= −4.5 V, V
IS
= 0 V, V
= 0 V, T
V
= 0 V, T
V
V
V
V
V
V
V
V
/d
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
V
GS
V
GS
GS
V
GS
GS
GS
V
DS
I
GS
DS
GS
D
t
I
GS
GS
DS
D
= 90 A/ms
= −4.5 V, V
= −0.5 A, R
= 0 V,
= V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −4.0 V, I
= 0 V
= 0 V
= 0.5 A, R
Test Condition
= 4.5 V, V
DS
= 2.5 V, I
= 4.5 V I
= 4.0 V I
2
J
DS
GS
J
DS
= 125°C
= 25°C
= −6.4 V
DS
DS
DS
DS
= 16 V
DS
DS
DS
DS
= 0 V
= −5.0 V, I
= −5.0 V, I
= −5.0 V, I
= −5.0 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
D
D
D
DD
D
D
D
D
DD
G
G
= 0.63 A
= 0.63 A
= −0.57 A
= 0.40 A
= −0.48 A
= −0.20 A
= −0.57 A
= 20 W
= 8.0 W
= −4.0 V,
= 10 V,
V
V
I
I
V
V
I
I
I
I
D
I
D
D
D
D
D
V
V
V
V
I
S
I
S
I
S
D
T
D
DS
DS
S
S
S
GS
DS
D
D
D
D
GS
DS
DS
DS
= −250 mA
J
= −250 mA
= 0.7 A
= 0.7 A
= 0.7 A
= 0.7 A
= −0.23 A
= −0.23 A
= −0.23 A
= 250 mA
= 250 mA
= −0.6 A
= −0.6 A
= −0.6 A
= −0.6 A
= 0.23 A
= 0.23 A
= 0.23 A
= 25 °C
= −8.0 V
= −8.0 V
= ±12 V
= −8.0V
= 20 V
= 20 V
= 20 V
= ±8.0
−0.45
−8.0
Min
0.6
20
−10.5
−0.83
0.083
0.227
0.786
0.506
0.013
0.023
0.050
0.036
0.410
0.078
−6.0
0.92
−2.1
0.29
0.22
0.36
0.32
0.51
0.76
0.76
0.63
0.63
Typ
160
2.2
2.0
2.0
2.8
1.3
2.2
0.1
0.1
0.2
0.5
0.4
0.5
27
22
33
13
38
28
0.375
0.445
Max
−1.0
0.30
0.46
0.90
225
1.0
1.0
1.5
5.0
3.0
4.0
1.1
1.1
10
10
46
22
55
40
−mV/ °C
mV/ °C
Units
mA
mA
pF
nC
ms
ms
W
V
V
S
V