NTJD4105CT1G ON Semiconductor, NTJD4105CT1G Datasheet - Page 7

• Manufacturer Part Number: NTJD4105CT1G
• Description: MOSFET N/P 20V/8V 630MA SOT-363
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTJD4105CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
• Drain To Source Voltage (vdss): 20V, 8V
• Current - Continuous Drain (id) @ 25° C: 630mA, 775mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 46pF @ 20V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.375 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 2 S, 2 S
• Drain-source Breakdown Voltage: 20 V @ N Channel or 8 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 0.63 A @ N Channel or 0.775 A @ P Channel
• Power Dissipation: 550 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4105CT1GOS; NTJD4105CT1GOS; NTJD4105CT1GOSTR

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTJD4105CT1
NTJD4105CT1G
NTJD4105CT2
NTJD4105CT2G
NTJD4105CT4
NTJD4105CT4G
Device
(Pb−Free)
(Pb−Free)
(Pb−Free)
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
Package
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