NTJD4105CT1G ON Semiconductor, NTJD4105CT1G Datasheet - Page 6

• Manufacturer Part Number: NTJD4105CT1G
• Description: MOSFET N/P 20V/8V 630MA SOT-363
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTJD4105CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
• Drain To Source Voltage (vdss): 20V, 8V
• Current - Continuous Drain (id) @ 25° C: 630mA, 775mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 46pF @ 20V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.375 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 2 S, 2 S
• Drain-source Breakdown Voltage: 20 V @ N Channel or 8 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 0.63 A @ N Channel or 0.775 A @ P Channel
• Power Dissipation: 550 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4105CT1GOS; NTJD4105CT1GOS; NTJD4105CT1GOSTR

5
4
3
2
1
0
0
Q
GS
Drain−to−Source Voltage vs. Total Charge
0.4
TYPICAL P−CHANNEL PERFORMANCE CURVES
Q
Figure 15. Gate−to−Source and
g
, TOTAL GATE CHARGE (nC)
Q
GD
0.8
Q
G(TOT)
1.2
1.6
V
GS
I
T
D
J
= −0.6 A
2
= 25°C
http://onsemi.com
2.4
6
0.7
0.6
0.5
0.3
0.2
0.1
0.4
0
Figure 16. Diode Forward Voltage vs. Current
0
V
−V
GS
SD
(T
= 0 V
J
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.2
= 25°C unless otherwise noted)
T
J
0.4
= 150°C
0.6
T
J
= 25°C
0.8
1