RTL030P02TR Rohm Semiconductor, RTL030P02TR Datasheet - Page 3

• Manufacturer Part Number: RTL030P02TR
• Description: MOSFET P-CH 20V 3A TUMT6
• Manufacturer: Rohm Semiconductor

Specifications of RTL030P02TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 760pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: TUMT6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1000 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
! ! ! ! Electrical characteristic curves
10000
0.001
1000
0.01
100
0.1
1000
10
10
100
Fig.4 Static Drain-Source On-State
0.01
1
10
Fig.1 Typical Transfer Characteristics
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
0.1
Fig.7 Typical Capacitance
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Ta 125 C
Ta 75 C
Ta 25 C
Ta
Ta 125 C
Ta 75 C
Ta 25 C
Ta
Resistance vs. Drain Current
vs. Drain-Source Voltage
DRAIN CURRENT : I
25 C
0.1
25 C
1
1
10
V
Pulsed
Ta 25 C
f 1MHz
V
D
DS
V
Pulsed
GS
(A)
GS
GS
C
C
C
DS
0V
iss
oss
rss
10V
(V)
(V)
4V
100
10
1000
10000
1000
100
1000
10
100
Fig.2 Static Drain-Source On-State
Fig.5 Static Drain-Source On-State
100
10
0.1
10
0.1
1
0.01
Fig.8 Switching Characteristics
V
V
V
Ta 125 C
Ta 75 C
Ta 25 C
Ta
t
GS
GS
GS
t
r
Resistance vs. Drain Current
d (off)
Resistance vs. Drain Current
DRAIN CURRENT : I
DRAIN CURRENT : I
25 C
2.5V
4.0V
4.5V
DRAIN CURRENT : I
t
f
0.1
1
1
1
t
D
V
Pulsed
d (on)
Ta 25 C
Pulsed
D
Ta 25 C
V
V
R
Pulsed
(A)
GS
D
DD
GS
G
(A)
(A)
10
2.5V
15V
4.5A
10
10
10
1000
100
0.01
10
0.1
Fig.3 Static Drain-Source On-State
10
0.1
1
8
7
6
5
4
3
2
1
0
0.0
Fig.9 Dynamic Input Characteristics
0
Fig.6 Reverse Drain Current vs.
Ta 125 C
Ta 75 C
Ta 25 C
Ta
SOURCE-DRAIN VOLTAGE : V
Ta 125 C
Ta 75 C
Ta 25 C
Ta
Resistance vs. Drain Current
0.2
TOTAL GATE CHARGE : Qg (nC)
1
DRAIN CURRENT : I
25 C
25 C
Source-Drain Voltage
0.4
2
0.6
RTL030P02
3
1
0.8
4
1.0
5
V
Pulsed
D
1.2
GS
Ta 25 C
V
I
R
Pulsed
6
(A)
D
DD
G
V
Pulsed
GS
1.4
10
4.5V
SD
3A
7
15V
0V
(V)
3/4
10
1.6
8