RTL030P02TR Rohm Semiconductor, RTL030P02TR Datasheet - Page 4

• Manufacturer Part Number: RTL030P02TR
• Description: MOSFET P-CH 20V 3A TUMT6
• Manufacturer: Rohm Semiconductor

Specifications of RTL030P02TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 760pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: TUMT6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1000 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
! ! ! ! Measurement circuits
Fig.12 Gate Charge Measurement Circuit
Fig.10 Switching Time Measurement Circuit
I
G(Const)
R
R
G
G
V
V
GS
GS
D.U.T.
D.U.T.
I
I
D
D
R
R
V
V
L
L
DD
DD
V
V
DS
DS
V
V
GS
DS
V
t
d(on)
GS
Fig.13 Gate Charge Waveforms
V
Fig.11 Switching Waveforms
G
Q
gs
10%
t
50%
on
90%
Pulse Width
t
10%
r
Q
gd
Q
g
90%
RTL030P02
t
d(off)
t
Charge
off
50%
t
90%
r
10%
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