IRF6619 International Rectifier, IRF6619 Datasheet - Page 2

• Manufacturer Part Number: IRF6619
• Description: MOSFET N-CH 20V 30A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6619

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5040pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6619TR

ƒ
…
Notes:
Static @ T
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
Q
Q
Q
Q
G
iss
oss
rss
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
g
sw
oss
rr
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current @T
(Body Diode)
Pulsed Source Current
(Body Diode) e
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
gs2
+ Q
gd
)
C
=25°C
Min. Typ. Max. Units
Min. Typ. Max. Units
1.55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
89
5040
1580
1.65
10.2
13.2
11.1
16.7
-5.8
–––
–––
–––
–––
–––
–––
–––
–––
780
–––
–––
2.2
3.5
9.3
0.8
14
38
22
21
71
25
29
18
2.45
-100
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
110
240
–––
2.2
3.0
1.0
2.3
1.0
57
44
27
mV/°C
mV/°C
mΩ
µA
nA
nC
nC
pF
nC
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 18
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs g
D
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
J
J
= 16A
= 24A
= 25°C, I
= 25°C, I
= V
= 16V, V
= 16V, V
= 10V, I
= 10V
= 10V, V
= 10V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 16V, V
= 0V
GS
, I
D
Conditions
D
Conditions
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 24A
= 24A, V
= 250µA
= 24A
= 30A g
= 24A g
= 0V
= 0V, T
= 0V
= 4.5V g
D
www.irf.com
GS
= 1mA
J
= 125°C
= 0V g