IRF6619 International Rectifier, IRF6619 Datasheet - Page 4

• Manufacturer Part Number: IRF6619
• Description: MOSFET N-CH 20V 30A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6619

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5040pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6619TR

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 6. Typical Transfer Characteristics
Fig 4. Typical Output Characteristics
100.0
8000
6000
4000
2000
1000
10.0
100
0.1
1.0
0.1
10
0
1
0.1
1.5
1
T J = 150°C
T J = 25°C
T J = -40°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
2.0
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.5V
Ciss
Coss
Crss
2.5
V DS = 10V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
1
f = 1 MHZ
10
3.0
TOP
BOTTOM
3.5
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
4.0
10
100
Fig 7. Normalized On-Resistance vs. Temperature
1.5
1.0
0.5
1000
100
10
10
-60 -40 -20
9
8
7
6
5
4
3
2
1
1
0.1
I D = 30A
V GS = 10V
0
Fig 5. Typical Output Characteristics
Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
T A = 25°C
T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
40
0
I D , Drain Current (A)
20
80
40
2.5V
≤ 60µs PULSE WIDTH
Tj = 150°C
1
60
80 100 120 140 160
120
TOP
BOTTOM
V GS = 3.0V
V GS = 3.5V
V GS = 4.0V
V GS = 4.5V
V GS = 5.0V
V GS = 10V
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160
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
200