IRF6619 International Rectifier, IRF6619 Datasheet - Page 7

• Manufacturer Part Number: IRF6619
• Description: MOSFET N-CH 20V 30A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6619

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5040pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6619TR

DirectFET™ Substrate and PCB Layout, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
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HEXFET
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D
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Re-Applied
Voltage
Power MOSFETs
G
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
S
S
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
D = DRAIN
G = GATE
S = SOURCE
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Body Diode
Period
for N-Channel
Body Diode Forward
Diode Recovery
D
D
Current
dv/dt
Forward Drop
di/dt
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Period
P.W.
V
V
I
SD
GS
DD
=10V
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