FDS8449 Fairchild Semiconductor, FDS8449 Datasheet

MOSFET N-CH 40V 7.6A 8-SOIC

FDS8449

Manufacturer Part Number
FDS8449
Description
MOSFET N-CH 40V 7.6A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDS8449

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 7.6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
7.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 5V
Input Capacitance (ciss) @ Vds
760pF @ 20V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.029 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
21 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.6 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.029Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8449TR

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FDS8449
40V N-Channel PowerTrench
General Description
These N-Channel MOSFETs are produced using
Fairchild
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
©2005 Fairchild Semiconductor Corporation
FDS8449 Rev B(W)
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJA
θJC
, T
Inverter
Power Supplies
Device Marking
STG
FDS8449
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
advanced
D
– Continuous
– Pulsed
D
FDS8449
D
Device
Parameter
S
S
S
PowerTrench
S
S
S
®
G
G
MOSFET
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1)
Features
High power handling capability in a widely used
surface mount package
RoHS compliant
7.6 A, 40V
5
6
7
8
Tape width
R
R
12mm
–55 to +150
Ratings
DS(on)
DS(on)
±20
125
7.6
2.5
40
50
50
25
1
= 29mΩ @ V
= 36mΩ @ V
December 2005
4
3
2
1
GS
GS
www.fairchildsemi.com
= 10V
= 4.5V
2500 units
Quantity
Units
°C/W
°C
W
V
V
A

Related parts for FDS8449

FDS8449 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Case θJC Package Marking and Ordering Information Device Marking Device FDS8449 FDS8449 ©2005 Fairchild Semiconductor Corporation FDS8449 Rev B(W) ® MOSFET Features • 7.6 A, 40V PowerTrench • High power handling capability in a widely used surface mount package • ...

Page 2

... R is guaranteed by design while R θ Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. FDS8449 Rev A( 25°C unless otherwise noted A Test Conditions (Note ...

Page 3

... Figure 3. On-Resistance Variation with Temperature 10V 125 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDS8449 Rev A(W) 3 2.6 2.2 1.8 3.5V 1.4 3.0V 1 0.6 2 2.5 0 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 0.06 0.05 0.04 0. 0.02 ...

Page 4

... 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area 0.001 0.01 0 TIME (sec) 1 Figure 11. Single Pulse Maximum Peak Current. FDS8449 Rev A(W) 1000 30V 800 20V 600 400 200 C rss Figure 8. Capacitance Characteristics. 50 100 μ 1ms 0.001 0.01 10 100 Figure 10. Single Pulse Maximum ...

Page 5

... SINGLE PULSE 0.001 0.0001 0.001 Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8449 Rev A(W) 0.01 0 TIME (sec ( θ JA θ JA ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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