FDS8449 Fairchild Semiconductor, FDS8449 Datasheet - Page 3

• Manufacturer Part Number: FDS8449
• Description: MOSFET N-CH 40V 7.6A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS8449

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 7.6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 760pF @ 20V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.029 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.029Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8449TR

Typical Characteristics
FDS8449 Rev A(W)
20
15
10
5
0
20
16
12
8
4
0
1.6
1.4
1.2
0.8
0.6
1
Figure 3. On-Resistance Variation with
0
1
Figure 1. On-Region Characteristics.
-50
V
V
DS
Figure 5. Transfer Characteristics.
6.0V
GS
= 10V
V
I
= 10V
D
GS
= 7.6A
-25
= 10V
1.5
0.5
V
V
GS
DS
T
, GATE TO SOURCE VOLTAGE (V)
4.5V
0
, DRAIN TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
4.0V
2
25
1
3.5V
T
A
50
= 125
2.5
1.5
o
C
75
100
o
C)
3
2
25
o
-55
C
125
3.0V
o
C
3.5
150
2.5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.001
0.01
100
2.6
2.2
1.8
1.4
0.6
0.1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
3
1
1
2
0
0
T
Drain Current and Gate Voltage.
V
A
GS
= 25
3.5V
= 0V
Gate-to-Source Voltage.
o
C
0.2
V
SD
4
V
, BODY DIODE FORWARD VOLTAGE (V)
V
4
GS
GS
, GATE TO SOURCE VOLTAGE (V)
4.0V
= 3.0V
I
0.4
D
T
, DRAIN CURRENT (A)
T
A
A
= 125
8
= 125
o
C
4.5V
o
6
0.6
C
25
12
o
C
0.8
6.0V
-55
8
o
www.fairchildsemi.com
C
16
I
D
1
= 3.5A
10V
1.2
20
10