FDS8449 Fairchild Semiconductor, FDS8449 Datasheet - Page 2

• Manufacturer Part Number: FDS8449
• Description: MOSFET N-CH 40V 7.6A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS8449

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 7.6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 760pF @ 20V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.029 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.029Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8449TR

E
I
Notes:
1. R
2 Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDS8449 Rev A(W)
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
Off Characteristics
BV
ΔBV
I
I
On Characteristics
V
ΔV
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics
V
t
Q
t
AS
DSS
GSS
d(on)
r
d(off)
rr
f
R
AS
FS
GS(th)
SD
the drain pins. R
ΔT
ΔT
DS(on)
iss
oss
rss
g
gs
gd
rr
G
θJA
GS(th)
DSS
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
θJC
is guaranteed by design while R
Parameter
(Note 2)
a)
(Note 2)
50°C/W when mounted
on a 1in
copper
θCA
is determined by the user's board design.
2
pad of 2 oz
(Note 3)
T
V
V
I
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
f = 1.0 MHz
V
V
V
V
V
I
A
D
D
F
DD
= 25°C unless otherwise noted
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 7.6 A,
= 250 μA, Referenced to 25°C
= 250 μA, Referenced to 25°C
= 10 V, I
= 40 V,
= 0 V,
= 32 V,
= ±20 V,
= V
= 10 V,
= 4.5 V,
= 10 V,
= 20 V,
= 20 V,
= 10 V,
= 20 V,
= 5 V
= 0 V,
Test Conditions
GS
,
D
I
= 7.6 A, T
D
I
I
V
V
D
I
I
I
V
I
R
I
I
d
= 7.3 A, L = 1 mH
D
D
D
D
D
D
S
iF
GS
DS
GEN
= 250 μA
GS
= 2.1 A
= 250 μA
= 7.6 A
= 6.8 A
= 7.6 A
= 1 A,
= 7.6 A,
/d
= 0 V
= 0 V
t
= 0 V,
= 6 Ω
= 100 A/µs
J
=125°C
(Note 2)
Min
40
1
b) 125°C/W when mounted on a
Scale 1 : 1 on letter size paper
minimum pad.
Typ
0.76
760
100
7.3
1.2
1.9
7.7
2.4
2.8
34
–5
21
26
29
21
60
23
17
9
5
3
7
Max Units
±100
www.fairchildsemi.com
1.2
27
29
36
43
18
10
17
11
1
3
6
mV/°C
mV/°C
mΩ
mJ
pF
nC
nC
μA
nA
pF
Ω
nC
nS
nC
pF
ns
ns
ns
ns
A
V
V
S
V