SPB17N80C3 Infineon Technologies, SPB17N80C3 Datasheet

MOSFET N-CH 800V 17A D2PAK

SPB17N80C3

Manufacturer Part Number
SPB17N80C3
Description
MOSFET N-CH 800V 17A D2PAK
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPB17N80C3

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
3.9V @ 1mA
Gate Charge (qg) @ Vgs
177nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 100V
Power - Max
227W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.29 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A
Power Dissipation
208000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
17A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
290mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Fall Time
6 ns
Rise Time
15 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000013370
SPB17N80C3INTR
SPB17N80C3T
SPB17N80C3XT
SPB17N80C3XTINTR
SPB17N80C3XTINTR

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Price
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Manufacturer:
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Part Number:
SPB17N80C3ATMA1
0
Rev. 2.3
Features
• new revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
CoolMOS C3 designed for:
• Industrial application with high DC bulk voltage
• Switching Application (Active Clamp Forward Topology)
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
CoolMOS
Type
SPB17N80C3
®
Power Transistor
2)
Package
PG-TO263
j
=25 °C, unless otherwise specified
AR
AR
1)
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
Marking
17N80C3
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
D
D
page 1
C
C
C
C
DS
=3.4 A, V
=17 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0…640 V
DD
DD
=50 V
Product Summary
V
R
Q
=50 V
DS
DS(on)max
g,typ
@ T
j
= 25°C
-55 ... 150
Value
670
±20
±30
227
0.5
PG-TO263
17
11
51
17
50
SPB17N80C3
0.29
800
91
Unit
A
mJ
A
V/ns
V
W
°C
V
nC
2007-11-28

Related parts for SPB17N80C3

SPB17N80C3 Summary of contents

Page 1

... Marking 17N80C3 Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse =3 = 2 2), =0…640 static >1 Hz =25 °C tot stg page 1 SPB17N80C3 800 25°C 0. PG-TO263 Value Unit 670 mJ 0 V/ns ±20 V ±30 227 W -55 ... 150 °C 2007-11-28 ...

Page 2

... I =1.0 mA GS(th =800 DSS T =25 ° =800 =150 ° = GSS = = DS(on) T =25 ° = = =150 ° MHz, open drain G page 2 SPB17N80C3 Value Unit Values Unit min. typ. max 0.55 K 260 °C 800 - - V - 870 - 2 µA - 150 - - - 100 nA - 0.25 0. 0.85 ...

Page 3

... =4 d(off 125° =640 plateau =25 ° =400 /dt =100 A/µ rrm AV while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS page 3 SPB17N80C3 Values Unit min. typ. max. - 2300 - pF - 100 - - 210 - - 177 - 5 1 550 - µ *f. AR DSS. ...

Page 4

... Rev. 2.3 2 Safe operating area I =f parameter 100 125 150 [° Typ. output characteristics I =f parameter [s] p page 4 SPB17N80C3 ); T =25 ° limited by on-state resistance 10 µs 100 µ 100 V [ =25 ° µs 1000 25 2007-11-28 ...

Page 5

... T Rev. 2.3 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 1.2 1.1 5 0.9 0 Typ. transfer characteristics I =f parameter typ 100 140 180 0 [°C] j page 5 SPB17N80C3 ); T =150 ° 4 6 [A] D |>2 DS(on)max j 25 °C 150 ° [ 2007-11-28 ...

Page 6

... F SD parameter 160 V 640 100 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 960 920 880 840 800 760 720 680 100 125 150 -60 [°C] j page 6 SPB17N80C3 j 150°C (98%) 25 °C 25°C (98°C) 150 °C 0.5 1 1 =0. - 100 140 T [° 180 2007-11-28 ...

Page 7

... Typ. capacitances C =f MHz Ciss 3 10 Coss Crss 100 200 V Rev. 2.3 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 SPB17N80C3 ) 100 200 300 400 500 600 700 V [V] DS 800 2007-11-28 ...

Page 8

... Definition of diode switching characteristics Rev. 2.3 page 8 SPB17N80C3 2007-11-28 ...

Page 9

... PG-TO263: Outline Rev. 2.3 page 9 SPB17N80C3 2007-11-28 ...

Page 10

... Infineon Technologies Office Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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