SPB17N80C3 Infineon Technologies, SPB17N80C3 Datasheet - Page 3

• Manufacturer Part Number: SPB17N80C3
• Description: MOSFET N-CH 800V 17A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB17N80C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 100V
• Power - Max: 227W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013370; SPB17N80C3INTR; SPB17N80C3T; SPB17N80C3XT; SPB17N80C3XTINTR; SPB17N80C3XTINTR

Rev. 2.3
1)
2)
3)
4)
is vertical without blown air
5)
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
J-STD20 and JESD22
Pulse width t
Repetitive avalanche causes additional power losses that can be calculated as P
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
C
C
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
5)
6)
is a fixed capacitance that gives the same stored energy as C
p
limited by T
j,max
Symbol Conditions
C
C
C
C
t
t
t
t
Q
Q
Q
V
V
t
Q
I
d(on)
r
d(off)
f
rr
rrm
plateau
SD
iss
oss
o(er)
o(tr)
gs
gd
g
rr
V
f =1 MHz
V
to 480 V
V
V
R
Tj = 125°C
V
V
V
T
V
di
page 3
j
GS
GS
DD
GS
DD
GS
GS
R
G
=25 °C
F
=400 V, I
/dt =100 A/µs
=4.7
=0 V, V
=0 V, V
=400 V,
=0/10 V, I
=640 V, I
=0 to 10 V
=0 V, I
F
DS
DS
=I
F
oss
=I
D
oss
S
=100 V,
=0 V
D
=17 A,
,
=17 A,
S
while V
while V
,
DS
DS
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
min.
=E
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AR
*f.
Values
2300
typ.
100
210
550
5.5
72
45
18
85
15
12
48
91
15
51
1
SPB17N80C3
max.
177
1.2
DSS.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DSS.
Unit
pF
ns
nC
V
V
ns
µC
A
2007-11-28