SPB17N80C3 Infineon Technologies, SPB17N80C3 Datasheet - Page 4

• Manufacturer Part Number: SPB17N80C3
• Description: MOSFET N-CH 800V 17A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB17N80C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 100V
• Power - Max: 227W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013370; SPB17N80C3INTR; SPB17N80C3T; SPB17N80C3XT; SPB17N80C3XTINTR; SPB17N80C3XTINTR

Rev. 2.3
1 Power dissipation
P
3 Max. transient thermal impedance
Z
parameter: D=t
thJC
tot
=f(T
=f(t
240
200
160
120
10
10
10
80
40
0
-1
-2
0
P
C
10
0
)
)
-5
0.01
single pulse
0.02
0.2
0.1
0.05
0.5
25
p
/T
10
-4
50
T
t
C
10
p
75
[°C]
[s]
-3
100
10
-2
125
10
150
page 4
-1
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: V
D
D
=f(V
=f(V
10
10
10
10
60
50
40
30
20
10
DS
-1
DS
0
2
1
0
1
0
); T
); T
limited by on-state
resistance
C
p
j
=25 °C
GS
=25 °C; D =0
5
10
10
V
V
DS
DS
DC
[V]
[V]
6.5 V
6 V
5.5 V
5 V
15
100
10 ms
SPB17N80C3
10 V
1 ms
100 µs
10 µs
20
20 V
1 µs
2007-11-28
1000
25