FDB8860 Fairchild Semiconductor, FDB8860 Datasheet

MOSFET N-CH 30V 80A D2PAK

FDB8860

Manufacturer Part Number
FDB8860
Description
MOSFET N-CH 30V 80A D2PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheets

Specifications of FDB8860

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.3 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
214nC @ 10V
Input Capacitance (ciss) @ Vds
12585pF @ 15V
Power - Max
254W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
31A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0019 Ohms @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
254 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB8860TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB8860
Manufacturer:
FSC
Quantity:
15 000
Part Number:
FDB8860
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDB8860
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
FDB8860
N-Channel Logic Level PowerTrench
30V, 80A, 2.6mΩ
Features
R
Q
Low Miller Charge
Low Q
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
DS(ON)
g(5)
= 89nC (Typ), V
RR
FDB8860 Rev A2
= 1.9mΩ (Typ), V
Body Diode
GS
= 5V
GS
= 5V, I
D
= 80A
1
Applications
®
DC-DC Converters
MOSFET
December 2010
www.fairchildsemi.com

Related parts for FDB8860

FDB8860 Summary of contents

Page 1

... V = 5V, I DS(ON 89nC (Typ g(5) GS Low Miller Charge Low Q Body Diode RR UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant FDB8860 Rev A2 ©2010 Fairchild Semiconductor Corporation FDB8860 Rev.A2 ® MOSFET Applications = 80A DC-DC Converters D 1 December 2010 www.fairchildsemi.com ...

Page 2

... Total Gate Charge at 10V g(TOT) Q Total Gate Charge at 5V g(5) Q Threshold Gate Charge g(TH) Q Gate to Source Gate Charge gs Q Gate Charge Threshold to Plateau gs2 Q Gate to Drain “Miller” Charge gd ©2010 Fairchild Semiconductor Corporation FDB8860 Rev. 25°C unless otherwise noted C Parameter o < 163 < 162 with C/W) θ ...

Page 3

... Drain-Source Diode Characteristics V Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes Starting =0.47mH 64A , Pulse width = 100s ©2010 Fairchild Semiconductor Corporation FDB8860 Rev. 25°C unless otherwise noted J Test Conditions V = 15V 80A 5V 1Ω 80A 40A SD ...

Page 4

... SINGLE PULSE 0. Figure 3. Normalized Maximum Transient Thermal Impedance 3000 1000 100 ©2010 Fairchild Semiconductor Corporation FDB8860 Rev. 25°C unless otherwise noted J 300 225 150 125 150 175 ( Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION (s) ...

Page 5

... PULSE DURATION = 40A D DUTY CYCLE=0.5% MAX 3.5 3.0 2.5 2.0 1 GATE TO SOURCE VOLTAGE (V) GS Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage ©2010 Fairchild Semiconductor Corporation FDB8860 Rev. 25°C unless otherwise noted J 500 10us ≠ 100 100us 10 1ms 10ms STARTING T 100ms DC ...

Page 6

... Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 20000 C iss 10000 C oss C rss f = 1MHz 1000 500 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 13. Capacitance vs Drain to Source Voltage ©2010 Fairchild Semiconductor Corporation FDB8860 Rev. 25°C unless otherwise noted J 1. 250 μ 1.05 1.00 0.95 0.90 -80 120 160 200 Figure 12 ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDB8860 Rev.A2 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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