FDB8860 Fairchild Semiconductor, FDB8860 Datasheet - Page 5

• Manufacturer Part Number: FDB8860
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8860

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 214nC @ 10V
• Input Capacitance (ciss) @ Vds: 12585pF @ 15V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0019 Ohms @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8860TR

©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
Typical Characteristics
Figure 5. Forward Bias Safe Operating Area
1000
Figure 9. Drain to Source On-Resistance
100
160
120
0.1
10
80
40
4.0
3.5
3.0
2.5
2.0
1.5
1
0
Variation vs Gate to Source Voltage
1
1.0
Figure 7. Transfer Characteristics
3
LIMITED BY R
AREA MAY BE
OPERATION IN THIS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DD
CURRENT LIMITED
BY PACKAGE
V
= 5V
V
4
DS
V
GS
GS
1.5
, DRAIN TO SOURCE VOLTAGE(V)
, GATE TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
I
DS(ON)
5
D
= 40A
2.0
T
T
J
J
6
= 25
T
T
= 175
SINGLE PULSE
J
μ
C
PULSE DURATION = 80
DUTY CYCLE=0.5% MAX
= MAX RATED
s
= 25
10
o
C
o
C
o
7
T
2.5
C
J
T
= 25
T
J
J
= 25°C unless otherwise noted
= 175
o
C
8
o
3.0
C
T
J
= -55
100us
100ms
9
10ms
1ms
10us
DC
o
μ
C
s
60
3.5
10
5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
Figure 10. Normalized Drain to Source On
500
Figure 6. Unclamped Inductive Switching
120
100
10
80
60
40
20
1
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0
Resistance vs Junction Temperature
Figure 8. Saturation Characteristics
0.0
-80
If R = 0
t
If R ≠ 0
t
AV
AV
STARTING T
= (L)(I
= (L/R)ln[(I
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
-40
DS
AS
1
T
t
0.2
AV
J
, DRAIN TO SOURCE VOLTAGE (V)
)/(1.3*RATED BV
, JUNCTION TEMPERATURE
, TIME IN AVALANCHE (ms)
AS
V
J
GS
*R)/(1.3*RATED BV
= 150 o C
0
Capability
= 4V
10
V
0.4
GS
V
GS
40
= 10V
= 5V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
DSS
STARTING T
μ
100
s
- V
V
80
0.6
GS
DD
DSS
= 3V
)
- V
www.fairchildsemi.com
120
J
DD
1000
V
I
= 25 o C
D
GS
) +1]
(
0.8
= 80A
O
= 10V
C
160
)
μ
10000
s
1.0
200