FDB8860 Fairchild Semiconductor, FDB8860 Datasheet - Page 6

• Manufacturer Part Number: FDB8860
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8860

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 214nC @ 10V
• Input Capacitance (ciss) @ Vds: 12585pF @ 15V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0019 Ohms @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8860TR

©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
10000
Figure 13. Capacitance vs Drain to Source
20000
1000
500
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-80
0.1
f = 1MHz
V
-40
GS
V
Junction Temperature
= 0V
DS
T
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE
0
Voltage
40
1
C
C
C
rss
oss
80
iss
T
J
120
= 25°C unless otherwise noted
(
V
I
D
10
GS
o C
160
= 250
= V
)
DS
μ
A
200
30
6
Figure 14. Gate Charge vs Gate to Source Voltage
Breakdown Voltage vs Junction Temperature
10
Figure 12. Normalized Drain to Source
1.10
1.05
1.00
0.95
0.90
8
6
4
2
0
-80
0
V
DD
20
= 15V
I
-40
D
= 1mA
40
T
J
, JUNCTION TEMPERATURE
Q
0
g
60
, GATE CHARGE (nC)
40
80
100 120 140 160 180
80
120
I
I
www.fairchildsemi.com
D
D
= 1A
= 80A
(
160
o
C
)
200