FDB8860 Fairchild Semiconductor, FDB8860 Datasheet - Page 2

• Manufacturer Part Number: FDB8860
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8860

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 214nC @ 10V
• Input Capacitance (ciss) @ Vds: 12585pF @ 15V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0019 Ohms @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8860TR

FDB8860 Rev A1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
V
V
I
E
P
T
R
R
R
BV
I
I
V
R
C
C
C
R
Q
Q
Q
Q
Q
Q
D
DSS
GSS
DSS
GS
AS
D
J
GS(th)
θJC
θJA
θJA
DS(
ISS
OSS
RSS
G
Device Marking
g(TOT)
g(5)
g(TH)
gs
gs2
gd
, T
Symbol
Symbol
DSS
ON)
STG
FDB8860
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (V
Continuous (V
Continuous (V
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Ambient TO-263,1in
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
FDB8860
Device
Parameter
GS
GS
GS
o
C
= 10V, T
= 5V, T
= 10V, T
C
T
C
C
< 162
J
< 163
= 25
TO-263AB
Parameter
= 25°C unless otherwise noted
Package
T
C
o
o
= 25°C unless otherwise noted
C)
C, with R
o
C)
I
V
V
V
V
I
I
I
I
T
V
f = 1MHz
f = 1MHz
V
V
V
D
D
D
D
D
J
DS
GS
GS
DS
DS
GS
GS
GS
θJA
= 1mA, V
= 80A, V
= 80A, V
= 80A, V
= 80A, V
= 175°C
= 0V
2
= 24V
= V
= 15V, V
= 0V to 10V
= 0V to 5V
= 0V to 1V
= ±20V
= 43
Test Conditions
Reel Size
GS
330mm
o
, I
2
C/W)
GS
GS
GS
GS
GS
copper pad area
D
GS
= 250µA
= 10V
= 5V
= 4.5V
= 10V,
= 0V
= 0V,
T
V
I
I
D
g
J
DD
= 1.0mA
= 80A
= 150°C
= 15V
Tape Width
24mm
Min
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-55 to +175
Ratings
Figure 4
9460
1710
1050
0.59
±20
Typ
165
947
254
1.8
9.1
1.7
1.7
1.6
1.9
2.1
2.5
89
26
18
33
30
80
80
31
62
43
-
-
-
-
www.fairchildsemi.com
12585
±100
2275
1575
Quantity
Max
800units
250
214
115
2.3
2.6
2.7
3.6
12
1
3
-
-
-
-
-
Units
Units
W/
o
o
o
mΩ
nC
nC
nC
nC
nC
nC
C/W
C/W
C/W
µA
pF
pF
pF
mJ
nA
o
Ω
W
V
V
V
V
A
A
A
A
C
o
C