FDB8860 Fairchild Semiconductor, FDB8860 Datasheet - Page 4

• Manufacturer Part Number: FDB8860
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8860

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 214nC @ 10V
• Input Capacitance (ciss) @ Vds: 12585pF @ 15V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0019 Ohms @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8860TR

FDB8860 Rev A1
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
1000
3000
0.01
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
50
2
1
10
10
0
-5
-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
25
0.2
0.1
0.05
0.02
0.01
T
C
, CASE TEMPERATURE
Temperature
50
Figure 3. Normalized Maximum Transient Thermal Impedance
10
10
75
-4
-4
SINGLE PULSE
100
T
J
Figure 4. Peak Current Capability
= 25°C unless otherwise noted
125
(
o
10
C
10
t, RECTANGULAR PULSE DURATION (s)
)
SINGLE PULSE
-3
-3
150
175
t, PULSE WIDTH (s)
4
Figure 2.
10
10
-2
-2
300
225
150
75
0
25
Maximum Continuous Drain Current vs
50
V
GS
10
Case Temperature
10
T
C
NOTES:
DUTY FACTOR: D = t
PEAK T
= 5V
-1
, CASE TEMPERATURE
-1
V
75
GS
J
= P
= 10V
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
DM
C
I = I
100
= 25
x Z
25
θJC
o
P
CURRENT LIMITED
BY PACKAGE
C
10
10
DM
1
/t
o
x R
0
C DERATE PEAK
2
0
125
175 - T
θJC
www.fairchildsemi.com
150
(
t
1
+ T
o
C
t
2
C
)
C
150
175
10
10
1
1